Samsung has launched mass production of its new high performance eUFS 3.1 storage modules. Designed primarily for high-end smartphones, the built-in storage drives offer some of Samsung’s fastest speeds to date, with read and write speeds similar to those of mid-range PC SSDs.
Initially, the Samsung eUFS 3.1 family of devices will include a 512 GB drive designed for sequential read speeds of up to 2100 MB / s, sequential write speed of up to 1200 MB / s, and more 100,000 IOPS and 70,000 IOPS for writing them respectively. Ultimately, the range will also gain 128 GB and 256 GB disks to respond to cheaper premium smartphones.
Samsung does not disclose which of the new UFS 3.1 features is supported by its 512 GB eUFS 3.1 drive, but given a considerably higher sequential write speed – 1,200 MB / s versus 410 MB / s offered by devices eUFS 3.0 from previous generation – devices are more than likely to support pseudo-SLC Write Booster caching.
Like other memory and storage manufacturers, Samsung announces volume production of a new product after delivering the first batch to a customer. But, while we were hoping that this meant that these new eUFS 3.1 disks would be used in the new series of Samsung Galaxy S20 phones, the teardowns have already confirmed that these devices use 3.0 disks. So whatever the new storage modules from Samsung, they haven’t been made available to consumers yet.
Overall, with the addition of a 512 GB eUFS 3.1 drive to its lineup, Samsung now offers one of the most comprehensive families of integrated storage devices, with products offering the full range of performance levels and capabilities.
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Source: Samsung
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