Home » Technology » Here are a few SEO title options for the article, balancing keyword relevance and readability: **Option 1 (Most Comprehensive):** * **Power Talk Performance Leader 3: Trends in 800V, GAN & SIC Semiconductors** **Option 2 (Concise):** * **Performan

Here are a few SEO title options for the article, balancing keyword relevance and readability: **Option 1 (Most Comprehensive):** * **Power Talk Performance Leader 3: Trends in 800V, GAN & SIC Semiconductors** **Option 2 (Concise):** * **Performan

by Rachel Kim – Technology Editor

Onsemi Advances Power Semiconductor Technology with 800V SiC, Bidirectional GaN, and SuperQ Solutions

Munich, Germany – September 19, 2024 ‌ – Onsemi Germany GmbH is spearheading advancements in power semiconductor technology‌ with the introduction⁢ of 800V silicon ⁤carbide (SiC) solutions​ alongside bidirectional 650V‍ gallium nitride (GaN) and enhanced SuperQ technology. These innovations target increased efficiency and performance in applications ranging from electric vehicles (EVs) and energy infrastructure to industrial power supplies.

The push for ⁤higher voltage and ⁤improved efficiency ‍is driven by the escalating demands⁢ of modern power systems.EVs require ⁢increasingly sophisticated power electronics to maximize range and reduce charging⁣ times, while renewable energy infrastructure necessitates robust and reliable components for⁣ grid ⁢stability. Onsemi’s new technologies directly​ address these needs, offering designers tools to overcome existing limitations in power conversion. The company anticipates these solutions will accelerate the adoption of SiC ​and GaN in mainstream‍ applications, lowering system costs and improving overall performance.

Onsemi’s 800V SiC technology builds ‍upon existing SiC MOSFET offerings, delivering higher⁢ breakdown voltage and lower on-resistance.This translates to reduced power losses and improved thermal performance, crucial for high-power applications like EV traction inverters and ⁣charging systems. Simultaneously, the introduction of bidirectional GaN devices enables simpler and more efficient power stage designs, particularly in power factor correction (PFC) and DC-DC conversion ‌stages. These devices eliminate the need for anti-parallel diodes, reducing component count and improving system reliability.

Complementing these advancements is‌ Onsemi’s SuperQ technology, an evolution of its existing insulated gate bipolar transistor (IGBT) portfolio. SuperQ offers improved switching characteristics and reduced tail currents, resulting in lower switching losses and increased efficiency. This technology ​is particularly well-suited for industrial motor drives and other demanding applications where robustness ‌and ⁢reliability are paramount.

Semikron International GmbH and Arrow Electronics are key distribution partners supporting the rollout of ‍these ​technologies. Nexperia also ​contributes‍ to the broader landscape of ​advanced power semiconductors. These innovations represent a‌ notable step towards more efficient and sustainable power systems, enabling a future powered by advanced ‌semiconductor technology.

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