samsung Unveils Mammoth 122.88 TB QLC SSD, Pushing Enterprise Storage Boundaries
At Flash Memory Summit (FMS) 2024, Samsung showcased its groundbreaking BM1743 enterprise QLC SSD, now available in an remarkable 122.88 TB capacity. This latest iteration builds upon the previously launched 61.44 TB model, delivering a significant leap in performance and efficiency. The new drive boasts a 4.1x enhancement in I/O performance, enhanced data retention, and a 45% boost in power efficiency for sequential writes compared to its predecessor.
The 128 TB-class QLC SSD achieves notable sequential read speeds of 7.5 GBps and write speeds of 3 GBps.For random operations, it delivers 1.6 million IOPS for reads and 45K IOPS for 16 KB random writes.This granular write performance suggests Samsung’s utilization of a 16 KB indirection unit (IU) for optimized flash management, a strategy also employed by solidigm in their high-capacity SSDs.
Beyond the massive QLC drive, Samsung also presented benchmarking results for its PM9D3a 8-channel gen 5 SSD. Positioned as a mainstream datacenter solution, this SSD family offers sequential read speeds of up to 12 GBps and write speeds of 6.8 GBps. Random read performance reaches 2 million IOPS, with random writes at 400K IOPS.
The PM9D3a is available in various form factors, with capacities reaching up to 32 TB, though M.2 versions are capped at 2 TB. Its firmware includes optional support for Flexible Data Placement (FDP) to help mitigate write amplification.
Samsung’s current enterprise SSD flagship, the PM1753, was also highlighted. This U.2 / E3.S SSD supports 16 NAND channels and capacities up to 32 TB.It achieves advertised sequential read speeds of 14.8 GBps and write speeds of 11 GBps. For 4 KB random accesses, it delivers 3.4 million IOPS for reads and 600K IOPS for writes.
The PM1753, a TLC SSD, offers a 1.7x performance improvement and a 1.7x power efficiency enhancement over the previous generation (PM1743), making it a compelling option for AI servers.
Adding to its technological prowess, Samsung also made its 9th Gen. V-NAND wafer available for viewing at FMS 2024. Mass production of this advanced flash memory commenced in April 2024,signaling a new era in memory technology.
